JPH0560263B2 - - Google Patents
Info
- Publication number
- JPH0560263B2 JPH0560263B2 JP84266066A JP26606684A JPH0560263B2 JP H0560263 B2 JPH0560263 B2 JP H0560263B2 JP 84266066 A JP84266066 A JP 84266066A JP 26606684 A JP26606684 A JP 26606684A JP H0560263 B2 JPH0560263 B2 JP H0560263B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- field effect
- effect transistor
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 40
- 230000000694 effects Effects 0.000 claims description 37
- 239000002344 surface layer Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 5
- 239000007943 implant Substances 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56214583A | 1983-12-16 | 1983-12-16 | |
| US56214483A | 1983-12-16 | 1983-12-16 | |
| US562145 | 1983-12-16 | ||
| US562144 | 1983-12-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60153163A JPS60153163A (ja) | 1985-08-12 |
| JPH0560263B2 true JPH0560263B2 (en]) | 1993-09-01 |
Family
ID=27072846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59266066A Granted JPS60153163A (ja) | 1983-12-16 | 1984-12-17 | バイポ―ラトランジスタ―電界効果トランジスタ組合せ装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0146181B1 (en]) |
| JP (1) | JPS60153163A (en]) |
| CA (1) | CA1220875A (en]) |
| DE (1) | DE3477313D1 (en]) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4609929A (en) * | 1984-12-21 | 1986-09-02 | North American Philips Corporation | Conductivity-enhanced combined lateral MOS/bipolar transistor |
| JP2751926B2 (ja) * | 1986-12-22 | 1998-05-18 | 日産自動車株式会社 | 電導度変調形ｍｏｓｆｅｔ |
| US4939566A (en) * | 1987-10-30 | 1990-07-03 | North American Philips Corporation | Semiconductor switch with parallel DMOS and IGT |
| US4926074A (en) * | 1987-10-30 | 1990-05-15 | North American Philips Corporation | Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
| GB2237930A (en) * | 1989-11-01 | 1991-05-15 | Philips Electronic Associated | A semiconductor device and method of manufacturing a semiconductor device |
| US5061652A (en) * | 1990-01-23 | 1991-10-29 | International Business Machines Corporation | Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure |
| JPH06163907A (ja) * | 1992-11-20 | 1994-06-10 | Hitachi Ltd | 電圧駆動型半導体装置 |
| DE9419617U1 (de) * | 1994-12-07 | 1996-04-04 | Ic - Haus Gmbh, 55294 Bodenheim | MOS-Leistungstransistor |
| US6747332B2 (en) * | 2002-04-01 | 2004-06-08 | Motorola, Inc. | Semiconductor component having high voltage MOSFET and method of manufacture |
| JP2005057028A (ja) * | 2003-08-04 | 2005-03-03 | Sanken Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
| CN107910367A (zh) * | 2017-11-13 | 2018-04-13 | 广东美的制冷设备有限公司 | 绝缘栅双极晶体管及其制作方法、ipm模块、以及空调器 |
| CN112509983B (zh) * | 2019-09-13 | 2023-03-24 | 杭州士兰集昕微电子有限公司 | 半导体器件及其制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4266238A (en) * | 1977-03-11 | 1981-05-05 | Zaidan Hojin Handotai Kenkyu Shinkokai | Semiconductor device having high-speed operation and integrated circuit using same |
| US4344081A (en) * | 1980-04-14 | 1982-08-10 | Supertex, Inc. | Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
-
1984
- 1984-12-05 DE DE8484201803T patent/DE3477313D1/de not_active Expired
- 1984-12-05 EP EP84201803A patent/EP0146181B1/en not_active Expired
- 1984-12-13 CA CA000470047A patent/CA1220875A/en not_active Expired
- 1984-12-17 JP JP59266066A patent/JPS60153163A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60153163A (ja) | 1985-08-12 |
| EP0146181A2 (en) | 1985-06-26 |
| EP0146181B1 (en) | 1989-03-15 |
| DE3477313D1 (en) | 1989-04-20 |
| EP0146181A3 (en) | 1986-03-12 |
| CA1220875A (en) | 1987-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |